个人简介
高青，校聘副教授，硕士生导师。博士毕业于南开大学电子信息与光学工程学院。从事新能源材料与器件的研究，主要针对低维纳米材料-有机导电钝化墨水、透明导电薄膜、导电银浆及碳/硅太阳电池等方向展开研究。主持国家自然科学基金青年基金、河北省自然科学青年科学基金、365365最快线路检测中心高层次引进人才启动项目3项，作为骨干成员参与国家级面上项目及校企合作的横向项目2项，申请和授权国家专利10余项。近5年在Carbon, Small, ACS Appl. Mater. Interfaces, Appl. Surf. Sci., Appl. Mater. Interface和ACS Appl. Energy Mater.等期刊发表20余篇文章。
研究方向
以新能源为主要研究方向，开展低成本、适合大面积产业化发展的半导体器件研究，助力国家双碳发展的战略目标，构建以新能源为主体的新型电力系统，具体研究方向包括：
1. 低维纳米材料的分散及载流子选择传输材料的研究；
2. 低维/硅形成的1D/3D或2D/3D异质结太阳电池性能研究；
3. 可用于柔性可穿戴光电器件、晶体硅等器件的透明导电薄膜光电性能研究；
4. 开发常温可印刷导电浆料，主要用于晶体硅太阳电池的降本提效。
学术成果
学术成果
1. Qing Gao, Jun Yan, Jianhui Chen,* et al. Commercial carbon nanotube as rear contacts for industrial p-type silicon solar cells with an efficiency exceeding 23%, Carbon, (IF:10.5)
2. Yuhua Bai, Qing Gao, Jianhui Chen*, et al. Interdigitated Back-Contacted Carbon Nanotube–Silicon Solar Cells, Small Structure, (IF:10.5)
3. Qing Gao, Yongheng Zhang, Jianping Ao,* Jinlian Bi,* et al. New Solution-Processed Surface Treatment to Improve the Photovoltaic Properties of Electrodeposited Cu(In,Ga)Se2 (CIGSe) Solar Cells. ACS Applied Materials & Interfaces, 2021, 13, 25451-25460. (IF:10.383，JCR/中科院分区双一区)
4. Qing Gao, Jianping Ao,* Jinlian Bi,* et al. A Novel Metal Precursor Structure for Electrodepositing Ultrathin CIGSe Thin-Film Solar Cell with High Efficiency. ACS Applied Materials & Interfaces, 2020, 12, 24403-24410. (IF:10.383，JCR/中科院分区双一区)
5. Gao Qing, Jianping Ao,* Yunxiang Zhang,*et al. Pulse Selenization in Cu(In,Ga)Se2 Solar Cells: A Promising Approach to Achieve High Efficiency by Electrodeposition. ACS Applied Energy Materials, 2021, 4, 8322-8329. (IF:6.959，二区)
6. Gao Qing, Cao Chun, Ao Jianping,* Bi Jinlian,* et al. Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film, Applied Surface Science, 2022, 152063. (IF:7.392，JCR分区一区)
Qing Gao, Jun Yan, Lu Wan, et al. High Efficiency Graphene-Oxide/Silicon Solar Cells with an Organic Passivated Interface, Advanced Materials Interfaces, 2022. (IF:6.389，二区)
