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薄膜物理及器件

添加时间:2020-07-16 16:10:17   浏览次数: 次

 课题组共有成员10余人,包括研发人员6人,其中包括教授2人,副教授3人,在读博士研究生2人,硕士研究生8人,分布在光学工程、凝聚态物理、理论物理等相关专业领域。团队老中青结合,富于创新精神和活力,具有丰富的研发经验和雄厚科研基础,主要从事功能薄膜材料、物理及器件研究。

       以多功能铁电薄膜作为出发点,探讨与铁电等薄膜材料应用有关的光伏、存储、储能、传感器等新材料、新现象等相关的科学问题及应用研究。本课题组主要研究方向:铁电薄膜材料光电效应以及光伏效应研究;硅基铁电材料薄膜的集成研究;微波用铁电复合薄膜材料及器件的研究;脉冲激光烧蚀制备纳米硅晶粒动力学研究等。
 当前主要研究方向
(1)硅基铁电薄膜的集成研究
(2)铁电复合薄膜制备及性能研究
(3)铁电储能
(4)脉冲激光烧蚀制备纳米硅晶粒动力学研究
 
科研条件
      实验室拥有薄膜制备的基本设备,包括脉冲激光沉积系统,磁控溅射系统以及实验室自行设计的脉冲激光和磁控共溅射系统多台,另外还具有XRD、铁电测试仪、AFM、LCR表等常用测试设备。
 
科研成果
       课题组先后承担了国家重点基础研究发展计划973前期研究项目、国家自然科学基金面上项目、高等学校博士学科点专项基金、河北省应用基础研究计划重点基础研究项目、河北省自然科学重点基金、教育部科学技术研究重点项目等省部级项目,发表SCI论文100余篇,获得授权的国家发明专利10余项。
 
标志性项目和论文列表
基金项目:
1. 铌酸银基无铅反铁电陶瓷储能性能增强与机理研究,国家自然科学基金青年科学基金项目,2019/01-2021/12。
2. 铁电铁磁复合薄膜的生长机理、微结构调控及物理性能,国家自然科学基金项目,2014/01-2017/12。
3. 钛酸锶钡铁电复合薄膜的生长机理、结构及性能研究,国家自然科学基金面上项目,2011/01-2013/12。
4. 硅基含铜铁电薄膜异质结集成研究,国家自然科学基金面上项目,2009/01-2011/12。
5. 激光烧蚀制备纳米硅晶粒成核区动力学研究,国家自然科学基金,2008/01-2010/12
6. 微、纳米氧化物电子器件阻挡层及高k材料研究,国家重点研发计划(973预研),2007/01-2008/12。
7. 硅基铁电存储器构架中金属间化合物导电阻挡层研究,国家自然科学基金面上项目,2006/01-2008/12。
8. 窄带隙铁电光伏材料的第一性原理研究, 国家自然科学基金理论专项 2016/01-2016/12。
9. 镍酸镧薄膜表面界面结构及外延生长的机理研究, 河北省重点基础研究专项,2009/1-2009/12。
10. 磁控和脉冲激光共溅射法制备纳米铁电磁复合薄膜,河北省重点基础研究专项,2014/01-2016/12。
11. 磁控与脉冲激光共溅射法制备超导YBa2Cu3O7-X外延复合薄膜的研究, 河北省自然科学基金面上基金,2018/01-2020/12。
12. 气相成核机制下纳米晶粒尺寸与蒸汽热力学参数的对应关系研究,河北省自然科学基金,2018/01-2020/12.
13. 新型二维功能材料Nxenes除重金属污染物的微观机理与应用研究,河北省自然科学基金2017/01-2020/12。
 
发表文章:
1. L.J. Wei, C.L. Li, J.X. Guo, L. Guan, Y.L. Wang and B.T. Liu, “Giant Optical absorption and ferroelectric polarization of BiCoO2S perovskite oxysulfide by first principles prediction”, Phys. Chem. Chem. Phys. 22, 11382-11391 (2020).
2. Z.C. Deng, X.X Pang, X.C. Ding, L.Z. Chu, X.D. Meng, Y.L. Wang, Nucleation and growth of Si nanoparticles under different pulse repetition rates without the baffle for nanosecond pulsed laser-ablated deposition. Laser Part. Beams, 38, 1-7 (2020).
3.J.H. Zhao, Z.H. Zhou, H. Wang, J.J. Wang, W.C. Hao, D.L. Ren, R. Guo, J.S. Chen, B.T. Liu and X.B. Yan, “ A Boolean OR gate implemented with an optoelectronic switching memristor” Appl. Phys. Lett. 115, 153504 (2019).
4. J.T. Liang, J.M. Song, X.H. Dai, Y.S. Zhang, X.F. Liu, X.B. Li, J. Zhang, X.D. Meng, L. Zhao, B.T. Liu, “Dielectric properties and resistance mechanism of BiFeO3 films with (1 1 0) orientation” Mater. Lett. 229 312–315(2018).
5.J.H. Chen, B.B. Chen, Y.J. Shen ,J.X. Guo, B.T. Liu, X.H. Dai, Y. Xu, and Y.H. Mai, “Achievement of two logical states through a polymer/silicon interface for organic-inorganic hybrid memory” Appl. Phys. Lett. 111, 191601 (2017).
6.J.H. Chen, Y.J. Shen, J.X. Guo, B.B. Chen, J.D. Fan, F. Li, B.T. Liu, H.X. Liu, Y. Xu, Y.H. Mai, “Electrochemical grafting passivation of silicon via electron transfer at polymer/silicon hybrid interface” Electrochim. Acta. 247, 1 September 2017, Pages 826-8349 (2017).
7. J.H. Chen, X.H. Dai, C.R. Li, Y.L. Cui, Q.X. Zhao, J.X. Guo, X.H. Li, X.Y. Zhang, Y.L. Wang, L.X. Ma, B.T. Liu, “Mixed-phase NiAl as barrier layer against perovskite oxides to react with Cu for ferroelectric memory with Cu metallization” J. Alloys Compd. 666 197e203 (2016).
8. X.H. Dai, L. Zhang, Z.D. Feng, X.H. Li, J.X. Guo, Y.J. F, Y. Zhou, Q.X. Zhao, J.Z. Lou, L.X. Ma, X.Y. Zhang, B.T. Liu, “Barrier performance of ultrathin amorphous Nb–Ni film between copper and silicon” Mater. Lett. 159 94–97 (2015).
9.X.H. Dai, J.X.Guo, L.Zhang, D.M.Jia, C.G.Qi, Y.Zhou, X.H.Li, J.B.Shi, Y.J.Fu, Y.L.Wang, J.Z.Lou, L.X.Ma, H.D.Zhao, B.T.Liu, “4.0-nm-thick amorphous Nb-Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si” J. Alloys Compd., 645, 491-495(2015).
10. Y.J. Fu, G.S. Fu, M. Li, D.M. Jia, Y.L. Jia, B.T. Liu, “Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor”, Appl. Phys. Lett. 104, 041903 (2014).
11. Y.J. Fu, F.J. Xia, Y.L. Jia, C.J. Jia, J.Y. Li, X.H. Dai, G.S. Fu, B.Y. Zhu, and B. T. Liu, “Bipolar resistive switching behavior of La0.5Sr0.5CoO3 films for nonvolatile memory applications”, Appl. Phys. Lett. 104, 223505 (2014).
12. B.T. Liu, D.Y. Zhao, J.Z. Xing, L. Yang, X.G. Zhang, J.X. Guo, X.H. Li, L.X. Ma, X.Y. Zhang, “Ultrathin amorphous Ti–Al film used as a diffusion barrier for copper metallization”, Appl. Phys. A, 111 841-844 (2013).
13. L.J. Wei, J.X. Guo, D.Y. Ge, X.H. Dai, L. Guan, Y.L. Wang, B.T. Liu, “Investigation of initial epitaxial growth of (Ba,Sr)TiO3 thin film on (001)SrTiO3 substrate using first-principles calculations ”, J. Alloys Compd. 599,11-15 (2013).
14. J.X. Guo, L.J. Wei, D.Y. Ge, L. Guan, Y.L. Wang, B.T. Liu, “Dissociation and reconstruction of O2 on Al(111) studied by First-principles” Applied Surface Science 264, 247-254 (2013).
15. B.T. Liu, J.H. Chen, X.H. Li, K.M. Wang, M. Li, D.Y. Zhao, L. Yang, Q.X. Zhao, L.X. Ma, X.Y. Zhang, “Investigation of amorphous Ni–Al–N film as diffusion barrier between Cu and SiO2”, J. Alloys Compd. 509, 8093– 8096 (2011).
16. X.H. Li, F.Q. Wang, B.T. Liu, D.F. Guo, and X.Y. Zhang, “Thermal – vacancy - assisted phase transition in FePt thin films”, Appl. Phys. Lett. 98, 141912 (2011).
17. B.T. Liu, L. Yang, X.H. Li, K.M. Wang, Z. Guo, J.H. Chen, M. Li, D.Y. Zhao, Q.X. Zhao, X.Y. Zhang, “Ultrathin amorphous Ni–Ti film as diffusion barrier for Cu interconnection”, Appl. Surf. Sci. 7 2920-2922 (2011).
18. X.H. Li, F.Q. Wang, Z. Guo, H. Li, D.F. Guo, B.T. Liu, X.Y. Zhang, “Amorphous Ni–Al underlayer-accelerated L10 ordering transition of FePt thin films”, Appl. Surf. Sci. 256 3822–3825 (2010).
19.B.T. Liu, J.W. Zhao, X.H. Li, Y. Zhou, F. Bian, X.Y. Wang, Q.X. Zhao, Y.L. Wang, Q.L. Guo, L.X. Wang, X.Y. Zhang, “Enhanced dielectric constant and fatigue-resistance of PbZr0.4Ti0.6O3 capacitor with magnetic intermetallic FePt top electrode”, Appl. Phys. Lett. 96, 252904/1-3 (2010).
20. Y.L. Wang, X.Y. Wang, Y Liu, B.T. Liu, G.S. Fu, “The elimination of degrations of the mean-field landau-type theory from the fancy size effect experiment in nanoscale ferroelectric BaTiO3 capacitors”, Phys. Lett. A 374, 4915-4918 (2010).
21. Y.N. Guo, B.T. Liu, J.W. Zhao, Y. Zhou, X.B. Yan, and X.Y. Zhang, “Barrier Performance of Various Thick Polycrystalline Ni–Al Films for Integrating PbZr0.4Ti0.6O3 Capacitors on Si”, J. Electrochem. Soc. 157 G127-G129 (2010).
22. Y.L. Wang, X.Y. Wang, L.Z. Chu, Z. C. Deng, W.H. Liang, B.T Liu, G.S. Fu, N. W.D, T. S and R. Y, “Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model”, Phys. Lett. A 373 4282-4286 (2009).
23. X.Y. Wang, Y.L. Wang, and R.J. Yang, Lattice model for strained nanoscale ferroelectric capacitors: Investigation on fundamental size limits in ferroelectricity, Appl. Phys. Lett. 95, 142910 (2009)
24. X.H. Li, F.G. Wang, Y.G. Liu, L Xu, J.W. Zhao, B.T. Liu, X.Y. Zhang, “Microstructure and magnetic properties of L10-FePt thin films prepared under high pressures”, Appl. Phys. Lett. 94, 172512/1-3 (2009).
25. J.X. Guo, L. Guan, F. Bian, Q. Li, B. Geng, Y.L. Wang, Q.X. Zhao, B.T. Liu, “First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 x 1) surface”, Appl. Surf. Sci. 255 7512–7516 (2009).
26. B.T. Liu, X.B. Yan, X. Zhang, Y, Zhou, F. Bian and X.Y. Zhang, “Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer”, Appl. Surf. Sci. 255 6179–6182 (2009).
27. B.T. Liu, X.B. Yan, Y.N. Guo, C.S. Cheng, F.Li, X. Zhang, F. Bian, and X.Y. Zhang, “Influence of crystallinity on the oxidation resistance of Ni-Al film used as diffusion barrier layer”, J. Phys. D: Appl. Phys. 42 065419/1-5 (2009).
28. J.X. Guo, L Guan, S.B. Wang, Q.X. Zhao, Y.L. Wang, B.T. Liu, “Adsorption of atom hydrogen on the Ti (0001) (1×1) Surface: A First Principles Density Functional Theory Study”, Appl. Surf. Sci. 255 3164 (2008).
29. Q.X. Zhao, F. Bian, Y. Zhou, Y.F. Gao, S.B. Wang, L. Ma, Z. Yan, B.T. Liu, “Optical emission, electron temperature, and microstructure of Cu film prepared by magnetron sputtering”, Mater. Lett. 62 4140-4142 (2008).
30. B.T. Liu, X.B. Yan, X. Zhang, C.S. Cheng, F. Li, F. Bian, Q.X. Zhao, Q.L. Guo, Y.L. Wang, X.H. Li, X.Y. Zhang, C.R. Li, Y.S. Wang, “Barrier performance of ultra-thin Ni-Ti film for integrating ferroelectric capacitors on Si”, Appl. Phys. Lett. 91 142908 (2007).
31. Y. Wang,B.T. Liu,F. Wei, Z.M. Yang, and J. Du, “Fabrication and electrical properties of (111) textured (Ba0.6Sr0.4)TiO3 film on platinized Si substrate”, Appl. Phys. Lett. 90,042905 (2007).
32. B.T. Liu, C.S. Cheng, F. Li, L. Ma, Q.X. Zhao, Z. Yan, D.Q. Wu,C.R. Li,Y. Wang, “Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si”, Appl. Phys. Lett.  88,252903 (2006).
 
发明专利:
1. 代秀红,刘保亭,付跃举,郭建新,周阳,关丽,赵庆勋,“一种纳米结构超复合薄膜及其制备方法”,(ZL CN201610114487.5)
2. 刘保亭,李锋,程春生,赵庆勋,闫正,“一种氧化物铁电存储单元及制备方法”,(ZL 2006100123702) 
3. 杜军, 王毅, 刘保亭, 魏峰, 杨志民, 毛昌辉,“一种射频溅射制备织构型钛酸锶钡介电陶瓷薄膜的方法”,(ZL 200710120872.1)
4. 刘保亭,马良,霍骥川,邢金柱,边芳,赵庆勋,郭庆林,王英龙,“一种用于铜互连的导电阻挡层材料及制备方法”, (ZL 200710185203.2)
5. 刘保亭,马良,邢金柱,霍骥川,边芳,赵庆勋,郭庆林,王英龙,“一种可用于铜互连的阻挡层材料及制备方法”, (ZL 200810054756.9)
6. 刘保亭, 李晓红,赵庆勋,郭庆林,王英龙, “一种磁控和脉冲激光共沉积系统”, (ZL200920101609.2)
7. 刘保亭,陈剑辉,边芳,赵庆勋,郭庆林,王英龙,“一种Cu与铁性氧化物功能薄膜集成的方法”,( ZL 201010598957.2)
8.刘保亭,张磊,李晓红,代秀红,郭建新,周阳,赵庆勋,王英龙,“一种用于铜互连的新型导电阻挡层材料(Nb-Ni)及其制备方法”,(ZL201310399157.1)
9.刘保亭,王世杰,闫小兵,郭哲,贾长江,娄建忠,“一种新型结构的微波铁电复合薄膜材料和制备方法”, (ZL201410358128.5)
10.刘保亭,施健, 代秀红,郭建新,李晓红,周阳,关丽,赵庆勋, “一种0-3型金属/陶瓷物质复合薄膜及其制备方法”,(ZL201410145097.5)
11.刘保亭,贾艳丽,闫启庚,施健,李晓红,代秀红,郭建新,周阳,赵庆勋,“纳米结构多功能铁磁复合薄膜材料和制备方法”,(ZL201410162403.6)
 
人才培养
       课题组博士、硕士研究生就业于国内高校、高科技企业(如北方微电子、英利集团)、国家专利局等,部分硕士生在国内外继续攻读博士学位,为国家和地方不断输送创新型研发人才。

 

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